| 原文 | 译文 | 详情 |
|---|---|---|
| 绝缘栅双极型晶体管 | insulated gate bipolar transistor | - |
| 短路安全工作区 | Short Circuit Safe Operating Area | - |
| 测量电磁波 | measuring electromagnetic wave | - |
| 接收处理模块 | receiving and processing module | - |
| 电磁波 | electromagnetic wave | - |
| 掺杂表面 | doped surface | - |
| 反射电磁波 | reflected electromagnetic wave | - |
| 透射电磁波 | transmitted electromagnetic wave | - |
| 电特性参数 | electrical characteristic parameter | - |
| 电特性图像 | electrical characteristic image | - |
| 像素灰度值 | pixel grayscale value | - |
| 激发光源 | excitation light source | - |
| 待测材料本体 | the tested material body | - |
| 时分模式 | time-division mode | - |
| 频分模式 | frequency-division mode | - |
| 支撑衬底 | supporting substrate | - |
| 埋层 | buried layer | - |
| 生长衬底 | growth substrate | - |
| 异质结构层 | heterojunction structure layer | - |
| 凹坑 | pit | - |
| 掺杂浓度 | doping concentration | - |
| III族氮化物材料 | group III nitride material. | - |
| 寄生电路 | parasitic circuit | - |
| 栅极驱动电路 | gate driving circuit | - |
| 槽沟栅 | trench gate | - |
| 阱区 | well region | - |
| 层间介质层 | interlayer dielectric layer | - |
| 反向耐压 | reverse withstand voltage | - |
| 正向导通压降 | forward conduction voltage drop | - |
| 漂移层 | drift layer | - |
| 反型电子沟道 | reverse electronics channel | - |
| 硼磷硅玻璃 | boro-phospho-silicate glass | - |
| 场截止层 | field stop layer | - |
| 元胞结构 | cell structure | - |
| 漏极区域 | drain region | - |
| 呈递减的变化 | decreasing change | - |
| 周期性变化 | periodic change | - |
| 有源层 | active layer | - |
| 呈递增的变化 | increasing change | - |
| 原子层 | atomic layer | - |
| 势垒层 | barrier layer | - |
| 缓冲层 | buffer layer | - |
| 沟道层 | channel layer | - |
| 成分变化元素 | composition change element | - |
| 直拉法 | Czochralski method | - |
| 耗尽型器件 | depletion device | - |
| 漏电极 | drain electrode | - |
| 增强型开关器件 | enhancement-mode device | - |
| 外延层 | epitaxial layer | - |
| 填充槽 | filling groove | - |
| 聚焦微束 | focused micro beams | - |
| Ga面 | Ga-face | - |
| GaN基材料 | GaN-based material | - |
| 栅电极 | gate electrode | - |
| 栅极区域 | gate region | - |
| 凹槽 | groove | - |
| 沟槽 | trench | - |
| 沟槽栅 | trench gate | - |
| Ⅲ族氮化物 | group III nitride | - |
| 异质结构 | heterojunction structure | - |
| 高能重离子 | high-energy heavy ions | - |
| 高阻硅衬底 | high-resistance silicon substrate | - |
| 欧姆接触 | in ohmic contact with | - |
| 绝缘材料 | insulating material | - |
| 绝缘结构 | insulating structure | - |
| 离子注入层 | ion implanted layer | - |
| 大束流 | large beam currents | - |
| 发光器件 | light emitting device | - |
| 发光结构 | light emitting structure | - |
| 发光单元 | light emitting unit | - |
| 导光槽 | light guide groove | - |
| 金属氮化物薄膜 | metal nitride thin film | - |
| 多层结构 | multilayer structure | - |
| N面 | N-face | - |
| 非掺杂半导体层 | non-doped semiconductor layer | - |
| n型离子扩散 | n-type ion diffusion | - |
| n型离子注入 | n-type ion implantation | - |
| n型半导体层 | n-type semiconductor layer | - |
| 成核层 | nucleation layer / nucleating layer | - |
| 寄生电容 | parasitic capacitance | - |
| 周期结构 | periodic structure | - |
| 荧光粉 | phosphors | - |
| 极性反转元素 | polarity reversal element | - |
| 极性反转层 | polarity reversal layer | - |
| p型Ga面GaN基材料 | p-type Ga-face GaN-based material | - |
| p型GaN基半导体层 | p-type GaN-based semiconductor layer | - |
| p型半导体材料 | p-type semiconductor material | - |
| 量子点 | quantum dots | - |
| 射频和微波器件 | radio frequencies and microwave device | - |
| 反射层 | reflective layer | - |
| 选择性刻蚀过程 | selective etching process | - |
| 选区外延 | selective region epitaxy | - |
| 半导体层 | semiconductor layer | - |
| 半导体结构 | semiconductor structure | - |
| 源电极 | source electrode | - |
| 源极区域 | source region | - |
| 空间电荷区 | source region | - |
| 超晶格结构 | superlattice structure | - |
| 悬浮区熔法 | suspended zone melting method | - |
| 二维电子气 | two-dimensional electron gas | - |
| 波长转换介质层 | wavelength conversion dielectric layer | - |
| 掩膜层 | mask layer | - |
| 衬底 | substrate | - |
| 开口 | opening | - |
| 金属原子层 | metal atomic layer | - |
| 多孔半导体层 | porous semiconductor layer | - |
| 提光结构 | light extraction structure | - |
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